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BFR340F Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BFR340F Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 8 page ![]() Jul-01-2003 1 BFR340F 1 2 3 NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation Transition frequency of 14 GHz High insertion gain Ideal for low current amplifiers and oscillators ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR340F FAs 1 = B 2 = E 3 = C TSFP-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 V Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 10 mA Base current IB 2 Total power dissipation1) TS 118°C Ptot 60 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 530 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance |
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