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BFS17S Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BFS17S Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 5 page  BFS17S Aug-20-2001 1 NPN Silicon RF Transistor For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA VPS05604 6 3 1 5 4 2 EHA07196 6 54 3 2 1 C1 E2 B2 C2 E1 B1 TR1 TR2 Type Marking Pin Configuration Package BFS17S MCs 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 V Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2.5 Collector current IC 25 mA Peak collector current, f = 10 MHz ICM 50 Total power dissipation TS 93 °C 1) Ptot 280 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point 2) RthJS 240 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance |
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