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TSM917ESA Datasheet(PDF) 3 Page - Silicon Laboratories |
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TSM917ESA Datasheet(HTML) 3 Page - Silicon Laboratories |
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3 / 15 page ![]() TSM917 TSM917 Rev. 1.0 Page 3 ELECTRICAL CHARACTERISTICS VCC = +5V, VEE = 0V, VIN+ = VREF, TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C. See Note 1. PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Supply Voltage Range VCC Inferred from the PSRR test TA = +25°C 1.8 5.5 V Supply Current ICC VCC = 1.6V TA = +25°C 0.75 μA VCC = 5V TA = +25°C 0.80 1.30 TA = TMIN to TMAX 1.60 IN+ Voltage Range VIN+ Inferred from the output swing test VEE - 0.2 VCC + 0.2 V Input Offset Voltage VOS (Note 2) TA = +25°C 1 5 mV TA = TMIN to TMAX 10 Input-Referred Hysteresis VHB (Note 3) 4 mV Input Bias Current IB TA = +25°C 0.15 1 nA TA = TMIN to TMAX 2 Power-Supply Rejection Ratio PSRR VCC = 1.8V to 5.5V 0.1 1 mV/V Output-Voltage Swing High VCC - VOH VCC = 5V, ISOURCE = 8mA TA = +25°C 190 400 mV TA = TMIN to TMAX 500 VCC = 1.8V, ISOURCE = 1mA TA = +25°C 55 200 TA = TMIN to TMAX 300 Output-Voltage Swing Low VOL VCC = 5V, ISINK = 8mA TA = +25°C 190 400 mV TA = TMIN to TMAX 500 VCC = 1.8V, ISINK = 1mA TA = +25°C 55 200 TA = TMIN to TMAX 300 Output Short-Circuit Current ISC Sourcing, VO = VEE VCC = 5V 95 mA VCC = 1.8V 8 Sinking, VO = VCC VCC = 5V 98 VCC = 1.8V 10 High-to-Low Propagation Delay (Note 4) tPD- VCC = 1.8V 17 µs VCC = 5V 22 Low-to-High Propagation Delay (Note 4) tPD+ VCC = 1.8V 30 µs VCC = 5V 95 Rise Time tRISE CL = 15pF 6 µs Fall Time tFALL CL = 15pF 4 µs Power-Up Time tON 1.2 ms Reference Voltage VREF TA = +25°C 1.227 1.245 1.263 V TA = TMIN to TMAX 1.200 1.290 Reference Voltage Temperature Coefficient TCVREF 95 ppm/°C Reference Output Voltage Noise en BW = 10Hz to 100kHz 600 µVRMS BW = 10Hz to 100kHz, CREF = 1nF 215 Reference Line Regulation ∆V REF / ∆V CC VCC = 1.8V to 5.5V 0.1 mV/V Reference Load Regulation ∆V REF / ∆I OUT ∆I OUT = 10nA ±0.2 mV/nA Note 1: All specifications are 100% tested at TA = +25°C. Specification limits over temperature (TA = TMIN to TMAX) are guaranteed by design, not production tested. Note 2: VOS is defined as the center of the hysteresis band at the input. Note 3: The hysteresis-related trip points are defined by the edges of the hysteresis band, measured with respect to the center of the hysteresis band (i.e., VOS) (See Figure 2). Note 4: Specified with an input overdrive (VOVERDRIVE) of 100mV, and load capacitance of CL = 15pF. VOVERDRIVE is defined above and beyond the offset voltage and hysteresis of the comparator input. For the TSM917, reference voltage error should also be added. |
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