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TSM917ESA Datasheet(PDF) 3 Page - Silicon Laboratories

Part # TSM917ESA
Description  1.8V Nanopower Comparator with Internal 1.245V Reference
PDF  15 Pages
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Manufacturer  SILABS [Silicon Laboratories]
Direct Link  http://www.silabs.com
Logo SILABS - Silicon Laboratories

TSM917ESA Datasheet(HTML) 3 Page - Silicon Laboratories

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TSM917
TSM917 Rev. 1.0
Page 3
ELECTRICAL CHARACTERISTICS
VCC = +5V, VEE = 0V, VIN+ = VREF, TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.
See Note 1.
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Voltage Range
VCC
Inferred from the
PSRR test
TA = +25°C
1.8
5.5
V
Supply Current
ICC
VCC = 1.6V
TA = +25°C
0.75
μA
VCC = 5V
TA = +25°C
0.80
1.30
TA = TMIN to TMAX
1.60
IN+ Voltage Range
VIN+
Inferred from the output swing test
VEE - 0.2
VCC + 0.2
V
Input Offset Voltage
VOS
(Note 2)
TA = +25°C
1
5
mV
TA = TMIN to TMAX
10
Input-Referred Hysteresis
VHB
(Note 3)
4
mV
Input Bias Current
IB
TA = +25°C
0.15
1
nA
TA = TMIN to TMAX
2
Power-Supply Rejection Ratio
PSRR
VCC = 1.8V to 5.5V
0.1
1
mV/V
Output-Voltage Swing High
VCC - VOH
VCC = 5V,
ISOURCE = 8mA
TA = +25°C
190
400
mV
TA = TMIN to TMAX
500
VCC = 1.8V,
ISOURCE = 1mA
TA = +25°C
55
200
TA = TMIN to TMAX
300
Output-Voltage Swing Low
VOL
VCC = 5V, ISINK = 8mA
TA = +25°C
190
400
mV
TA = TMIN to TMAX
500
VCC = 1.8V,
ISINK = 1mA
TA = +25°C
55
200
TA = TMIN to TMAX
300
Output Short-Circuit Current
ISC
Sourcing, VO = VEE
VCC = 5V
95
mA
VCC = 1.8V
8
Sinking, VO = VCC
VCC = 5V
98
VCC = 1.8V
10
High-to-Low Propagation Delay
(Note 4)
tPD-
VCC = 1.8V
17
µs
VCC = 5V
22
Low-to-High Propagation Delay
(Note 4)
tPD+
VCC = 1.8V
30
µs
VCC = 5V
95
Rise Time
tRISE
CL = 15pF
6
µs
Fall Time
tFALL
CL = 15pF
4
µs
Power-Up Time
tON
1.2
ms
Reference Voltage
VREF
TA = +25°C
1.227
1.245
1.263
V
TA = TMIN to TMAX
1.200
1.290
Reference Voltage
Temperature Coefficient
TCVREF
95
ppm/°C
Reference Output Voltage
Noise
en
BW = 10Hz to 100kHz
600
µVRMS
BW = 10Hz to 100kHz, CREF = 1nF
215
Reference Line Regulation
∆V
REF
/
∆V
CC
VCC = 1.8V to 5.5V
0.1
mV/V
Reference Load Regulation
∆V
REF
/
∆I
OUT
∆I
OUT = 10nA
±0.2
mV/nA
Note 1: All specifications are 100% tested at TA = +25°C. Specification limits over temperature (TA = TMIN to TMAX) are guaranteed by
design, not production tested.
Note 2: VOS is defined as the center of the hysteresis band at the input.
Note 3: The hysteresis-related trip points are defined by the edges of the hysteresis band, measured with respect to the center of the
hysteresis band (i.e., VOS) (See Figure 2).
Note 4: Specified with an input overdrive (VOVERDRIVE) of 100mV, and load capacitance of CL = 15pF. VOVERDRIVE is defined above and
beyond the offset voltage and hysteresis of the comparator input. For the TSM917, reference voltage error should also be
added.



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