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BSD223P Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # BSD223P
Description  OptiMOS -P Small-Signal-Transistor
PDF  8 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSD223P Datasheet(HTML) 1 Page - Infineon Technologies AG

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2002-07-04
Page 1
Preliminary data
BSD 223P
OptiMOS
-P Small-Signal-Transistor
Product Summary
VDS
-20
V
RDS(on)
1.2
Ω
ID
-0.39
A
Feature
• Dual P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
SOT-363
VPS05604
6
3
1
5
4
2
Gate
pin 2,5
Drain
pin 6,3
Source
pin 1,4
MOSFET1: 1,2,6
MOSFET2: 3,4,5
Marking
X1s
Type
Package
Ordering Code
BSD 223P
SOT-363
Q67042-S4059
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
TA=25°C
TA=70°C
ID
-0.39
-0.31
A
Pulsed drain current
TA=25°C
ID puls
-1.56
Avalanche energy, single pulse
ID=-0.39 A , VDD=-10V, RGS=25Ω
EAS
1.4
mJ
Reverse diode dv/dt
IS=-0.39A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C
dv/dt
-6
kV/µs
Gate source voltage
VGS
±12
V
Power dissipation
TA=25°C
Ptot
0.25
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C
IEC climatic category; DIN IEC 68-1
55/150/56


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