BSP170P datasheet(3/8 Pages) INFINEON

3 / 8 page

2002-01-16

Page 3

Final data

BSP 170 P

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

gfs

VDS≤2*ID*RDS(on)max ,

ID=-1.9

1.4

2.8

Input capacitance

Ciss

VGS=0, VDS=-25V,

f=1MHz

328

410

Output capacitance

Coss

105

135

Reverse transfer capacitance

Crss

Turn-on delay time

td(on)

VDD=-30V, VGS=-10V,

ID=-1.9A, RG=6Ω

Rise time

Turn-off delay time

td(off)

138

Fall time

Gate Charge Characteristics

Gate to source charge

Qgs

VDD=-48V, ID=-1.9A

-1.4

-2.1

Gate to drain charge

Qgd

-3.6

-5.4

Gate charge total

VDD=-48V, ID=-1.9A,

VGS=0 to -10V

-12.5

-16

Gate plateau voltage

V(plateau) VDD=-48V, ID=-1.9A

-3.85

Reverse Diode

Inverse diode continuous

forward current

TA=25°C

-1.9

Inverse diode direct current,

pulsed

ISM

-7.6

Inverse diode forward voltage

VSD

VGS=0, IF=-1.9A

-0.85

-1.1

Reverse recovery time

trr

VR=-30V, IF=lS,

diF/dt=-100A/µs

Reverse recovery charge

Qrr

VR=-30V, IF=lS,

diF/dt=100A/µs

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