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BSP171P Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BSP171P Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 9 page  BSP171P SIPMOS® Small-Signal-Transistor Features • P-Channel • Enhancement mode • Logic level • Avalanche rated • dv /dt rated Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C 1) A T A=70 °C 1) Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=-1.9 A, R GS=25 Ω mJ Reverse diode dv /dt dv /dt I D=-1.9 A, V DS=-48 V, di /dt =-200 A/µs, T j,max=150 °C kV/µs Gate source voltage V GS V Power dissipation P tot T A=25 °C 1) W Operating and storage temperature T j, T stg °C IEC climatic category; DIN IEC 68-1 55/150/56 -55 ... 150 ±20 -6 -1.9 -1.5 1.8 Value 70 -7.6 steady state V DS -60 V R DS(on),max 0.3 Ω I D -1.9 A Product Summary Type Package Ordering Code Marking BSP 171 P SOT-223 Q67041-S4019 171P SOT-223 Rev. 2.0 page 1 2004-01-20 |
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