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BSP295 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BSP295 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 8 page  Data Sheet 1 05.99 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP 295 50 V 1.8 A 0.3 Ω SOT-223 BSP 295 Type Ordering Code Tape and Reel Information BSP 295 Q67000-S066 E6327 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 50 V Drain-gate voltage RGS = 20 kΩ V DGR 50 Gate source voltage VGS ± 20 ESD Sensitivity (HBM) as per MIL-STD 883 Class 1 Continuous drain current TA = 34 ˚C ID 1.8 A DC drain current, pulsed TA = 25 ˚C IDpuls 7.2 Power dissipation TA = 25 ˚C Ptot 1.8 W BSP 295 |
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