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BSP299 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BSP299 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 9 page  Semiconductor Group 1 Sep-12-1996 BSP 299 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.1 ... 4.0 V Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP 299 500 V 0.4 A 4 Ω SOT-223 BSP 299 Type Ordering Code Tape and Reel Information BSP 299 Q67000-S225 E6327 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 44 °C ID 0.4 A DC drain current, pulsed TA = 25 °C IDpuls 1.6 Avalanche energy, single pulse ID = 1.2 A, VDD = 50 V, RGS = 25 Ω L = 163 mH, Tj = 25 °C EAS 130 mJ Gate source voltage VGS ± 20 V Power dissipation TA = 25 °C Ptot 1.8 W |
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