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BSP319 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BSP319 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 8 page  Data Sheet 1 05.99 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • VGS(th) = 1.2 ...2.0 V Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP 319 50 V 3.8 A 0.07 Ω SOT-223 BSP 319 Type Ordering Code Tape and Reel Information BSP 319 Q67000-S273 E6327 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 29 ˚C ID 3.8 A DC drain current, pulsed TA = 25 ˚C IDpuls 15 Avalanche energy, single pulse ID = 3.8 A, VDD = 25 V, RGS = 25 Ω L = 6.2 mH, Tj = 25 ˚C EAS 90 mJ Gate source voltage VGS ± 20 V ESD Sensitivity (HBM) as per MIL-STD 883 Class 1 Power dissipation TA = 25 ˚C Ptot 1.8 W BSP 319 |
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Similar Description - BSP319 |
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