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BSP324 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BSP324 Datasheet(HTML) 3 Page - Infineon Technologies AG |
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3 / 8 page ![]() 2003-02-21 Page 3 Rev. 1.0 BSP324 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=0.14A 0.09 0.19 - S Input capacitance Ciss VGS=0, VDS=25V, f=1MHz - 103 154 pF Output capacitance Coss - 9.2 13.6 Reverse transfer capacitance Crss - 3.8 5.7 Turn-on delay time td(on) VDD=225V, VGS=10V, ID=0.17A, RG=6Ω - 4.6 6.9 ns Rise time tr - 4.4 6.6 Turn-off delay time td(off) - 17 25 Fall time tf - 68 102 Gate Charge Characteristics Gate to source charge Qgs VDD=320V, ID=0.17A - 0.35 0.45 nC Gate to drain charge Qgd - 2.17 2.82 Gate charge total Qg VDD=320V, ID=0.17A, VGS=0 to 10V - 4.54 5.9 Gate plateau voltage V(plateau) VDD=320V, ID=0.17A - 3.6 - V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - 0.17 A Inv. diode direct current, pulsed ISM - - 0.68 Inverse diode forward voltage VSD VGS=0, IF=0.17A - 0.8 1.2 V Reverse recovery time trr VR=200V, IF=lS, diF/dt=100A/µs - 85 127 ns Reverse recovery charge Qrr - 104 156 nC |
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