STB28N60DM2 datasheet(3/20 Pages) STMICROELECTRONICS

3 / 20 page

STB28N60DM2, STP28N60DM2, STW28N60DM2

Electrical ratings

DocID027040 Rev 4

3/20

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase = 100 °C

IDM(1)

Drain current (pulsed)

PTOT

Total dissipation at Tcase = 25 °C

170

dv/dt(2)

Peak diode recovery voltage slope

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

Tstg

Storage temperature

-55 to 150

°C

Operating junction temperature

Notes:

(1) Pulse width is limited by safe operating area.

(2) ISD ≤ 21 A, di/dt=900 A/μs; VDS peak < V(BR)DSS,VDD = 400 V

(3) VDS ≤ 480 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

D²PAK

TO-220

TO-247

Rthj-case

Thermal resistance junction-case

0.74

°C/W

Rthj-pcb(1)

Thermal resistance junction-pcb

Rthj-amb

Thermal resistance junction-ambient

62.5

Notes:

(1) When mounted on a 1-inch² FR-4, 2 Oz copper board.

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR(1)

Avalanche current, repetitive or not repetitive

EAS(2)

Single pulse avalanche energy

350

Notes:

(1) pulse width limited by Tjmax

(2) starting Tj = 25 °C, ID = IAR, VDD = 50 V.

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