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STB45N60DM2AG Datasheet(PDF) 1 Page - STMicroelectronics |
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STB45N60DM2AG Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 15 page  July 2015 DocID027981 Rev 1 1/15 This is information on a product in full production. www.st.com STB45N60DM2AG Automotive-grade N- channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2 Power MOSFET in a D²PAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS @ TJmax. RDS(on) max. ID PTOT STB45N60DM2AG 650 V 0.093 Ω 34 A 250 W • Designed for automotive applications and AEC-Q101 qualified • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STB45N60DM2AG 45N60DM2 D²PAK Tape and reel 1 3 TAB D2PAK |
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