STF7LN80K5

Electrical characteristics

DocID028769 Rev 1

5/13

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

5

A

(1)

Source-drain current

(pulsed)

-

20

A

VSD

(2)

Forward on voltage

-

1.6

V

Reverse recovery time

See Figure 16: "Test circuit for

inductive load switching and diode

recovery times"

-

276

ns

Reverse recovery

charge

-

2.13

µC

Reverse recovery

current

-

15.4

A

Reverse recovery time

See Figure 16: "Test circuit for

inductive load switching and diode

recovery times"

-

402

ns

Reverse recovery

charge

-

2.79

µC

Reverse recovery

current

-

13.9

A

Notes:

(1)

Pulse width limited by safe operating area

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Gate-source breakdown voltage

30

-

-

V

The built-in back-to-back Zener diodes have been specifically designed to enhance the

ESD capability of the device. The Zener voltage is appropriate for efficient and cost-

effective intervention to protect the device integrity. These integrated Zener diodes thus

eliminate the need for external components.