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BSS83P Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BSS83P Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 9 page ![]() 2003-06-23 Page 1 BSS 83 P Rev. 1.0 SIPMOS® Small-Signal-Transistor Features · P-Channel · Enhancement mode · Avalanche rated · Logic Level · dv/dt rated Product Summary Drain source voltage V VDS -60 Drain-source on-state resistance RDS(on) 2 W Continuous drain current A ID -0.33 1 2 3 VPS05161 Type Package Ordering Code BSS 83 P SOT-23 Q67041-S1416 Marking YAs Pin 1 PIN 2 PIN 3 G S D Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Unit Value -0.33 -0.27 A Continuous drain current TA = 25 °C TA = 70 °C ID Pulsed drain current TA = 25 °C ID puls -1.32 Avalanche energy, single pulse ID = -0.33 A , VDD = -25 V, RGS = 25 W 9.5 mJ EAS Avalanche energy, periodic limited by Tjmax EAR 0.036 d v/dt 6 Reverse diode d v/dt IS = -0.33 A, VDS = -48 V, di/dt = 200 A/µs, Tjmax = 150 °C kV/µs Gate source voltage VGS ±20 V Power dissipation TA = 25 °C Ptot 0.36 W Operating and storage temperature Tj , Tstg -55...+150 °C IEC climatic category; DIN IEC 68-1 55/150/56 |
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