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BSS84P Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BSS84P Datasheet(HTML) 3 Page - Infineon Technologies AG |
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3 / 8 page ![]() 2002-09-04 Page 3 Final data BSS 84 P Electrical Characteristics, at TA = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS£2*ID*RDS(on)max , ID=-0.14A 0.065 0.13 - S Input capacitance Ciss VGS=0, VDS=-25V, f=1MHz - 15 19 pF Output capacitance Coss - 6 8 Reverse transfer capacitance Crss - 2 3 Turn-on delay time td(on) VDD=-30V, VGS=-4.5V, ID=-0.14A, RG=25W - 6.7 10 ns Rise time tr - 16.2 24.3 Turn-off delay time td(off) - 8.6 12.9 Fall time tf - 20.5 30.8 Gate Charge Characteristics Gate to source charge Qgs VDD=-48V, ID=-0.17A - 0.25 0.37 nC Gate to drain charge Qgd - 0.3 0.45 Gate charge total Qg VDD=-48V, ID=-0.17A, VGS=0 to -10V - 1 1.5 Gate plateau voltage V(plateau) VDD=-48V, ID=-0.17A - -3.42 - V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - -0.17 A Inv. diode direct current, pulsed ISM - - -0.68 Inverse diode forward voltage VSD VGS=0, IF=-0.17A - -0.93 -1.24 V Reverse recovery time trr VR=-30V, IF=lS, diF/dt=100A/µs - 23 34 ns Reverse recovery charge Qrr - 10 15 nC |
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