STGIPN3H60AT datasheet(8/19 Pages) STMICROELECTRONICS

Part #	STGIPN3H60AT

Description	SLLIMM™nano (small low-loss intelligent molded module) IPM, 3 A - 600 V 3-phase IGBT inverter bridge

PDF	19 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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8 / 19 page

Electrical characteristics

STGIPN3H60AT

8/19

DocID026945 Rev 1

Electrical characteristics

Tj = 25 °C unless otherwise specified.

Note:

tON and tOFF include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are

the switching time of IGBT itself under the internally given gate driving condition.

Figure 3. Switching time test circuit

Table 7. Inverter part

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector-emitter

saturation voltage

VCC = Vboot = 15 V, VIN

(1)= 0 - 5 V,

IC = 1 A

2.15

2.6

VCC = Vboot = 15 V, VIN

(1)= 0 - 5 V,

IC = 1 A, TJ = 125 °C

-1.65

ICES

Collector-cut off current

(VIN

(1)= 0 “logic state”)

VCE = 550 V, VCC = VBoot = 15 V

250

µA

Diode forward voltage

VIN

(1) = 0 “logic state”, I

C = 1 A

1.7

Inductive load switching time and energy

ton

Turn-on time

VDD = 300 V,

VCC = Vboot = 15 V,

VIN

(1) = 0 - 5 V,

IC = 1 A

(see Figure 4)

-275

tc(on)

Crossover time (on)

toff

Turn-off time

890

tc(off)

Crossover time (off)

125

trr

Reverse recovery time

Eon

Turn-on switching losses

µJ

Eoff

Turn-off switching losses

Applied between

HINi, LINi and GND for i = U, V, W (LIN inputs are active-low).

VBOOT>VCC

VCE

VCC

INPUT

BUS

Lin

Hin

Vcc

LVG

HVG

OUT

BOOT

GND

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