BTS100 datasheet(2/10 Pages) INFINEON

2 / 10 page

TEMPFET® BTS 100

04.96

Electrical Characteristics

j = 25

°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain-source breakdown voltage

GS = 0, ID = – 0.25 mA

(BR)DSS

– 50

––

Gate threshold voltage

GS = VDS, ID = – 1 mA

GS(th)

– 2.5

– 3.0

– 3.5

Zero gate voltage drain current

GS = 0 V, VDS = – 50 V

j = 25 °C

j = 150 °C

DSS

–

– 1

– 100

– 10

– 300

µA

Gate-source leakage current

GS = – 20 V, VDS = 0

j = 25 °C

j = 150 °C

GSS

–

– 10

– 2

– 100

– 4

µA

Drain-source on-state resistance

GS = – 10 V, ID = – 5 A

DS(on)

–

0.25

0.3

Ω

Dynamic Characteristics

Forward transconductance

DS ≥ 2 × ID × RDS(on)max, ID = – 5 A

1.5

2.3

4.0

Input capacitance

GS = 0, VDS = – 25 V, f = 1 MHz

iss

–

900

1200

Output capacitance

GS = 0, VDS = – 25 V, f = 1 MHz

oss

–

350

550

Reverse transfer capacitance

GS = 0, VDS = – 25 V, f = 1 MHz

rss

–

130

230

Turn-on time

on, (ton = td(on) + tr)

CC = – 30 V, VGS = – 10 V, ID = – 2.9 A,

GS = 50 Ω

d(on)

–

Turn-off time

off, (toff = td(off) + tf)

CC = – 30 V, VGS = – 10 V, ID = – 2.9 A,

GS = 50 Ω

d(off)

–

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