BTS131 datasheet(2/10 Pages) INFINEON

Part #	BTS131

Description	TEMPFET(N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic)

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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2 / 10 page

TEMPFET® BTS 131

19.02.04

Electrical Characteristics

j = 25 °C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain-source breakdown voltage

GS = 0, ID = 0.25 mA

(BR)DSS

––

Gate threshold voltage

GS = VDS, ID = 1 mA

GS(th)

1.5

2.0

2.5

Zero gate voltage drain current

GS = 0 V, VDS = 50 V

j = 25 °C

j = 125 °C

DSS

–

100

300

µA

Gate-source leakage current

GS = 20 V, VDS = 0

j = 25 °C

j = 150 °C

GSS

–

100

µA

Drain-source on-state resistance

GS = 4.5 V, ID =12 A

DS(on)

–

0.05

0.06

Ω

Dynamic Characteristics

Forward transconductance

DS ≥ 2 × ID × RDS(on)max, ID = 12 A

Input capacitance

GS = 0, VDS = 25 V, f = 1 MHz

iss

800

1050

1400

Output capacitance

GS = 0, VDS = 25 V, f = 1 MHz

oss

–

500

750

Reverse transfer capacitance

GS = 0, VDS = 25 V, f = 1 MHz

rss

–

200

300

Turn-on time

on, (ton = td(on) + tr)

CC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 Ω

d(on)

–

Turn-off time

off, (toff = td(off) + tf)

CC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 Ω

d(off)

–

100

130

–

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