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STB27NM60ND Datasheet(PDF) 5 Page - STMicroelectronics |
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STB27NM60ND Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 19 page ![]() DocID15406 Rev 4 5/19 STB27NM60ND, STW27NM60ND Electrical characteristics 19 Qg Total gate charge VDD = 480 V, ID = 21 A, VGS = 10 V, (see Figure 17) -80 - nC Qgs Gate-source charge - 15 - nC Qgd Gate-drain charge - 40 - nC Rg Gate input resistance f = 1 MHz, gate DC Bias = 0, test signal level = 20 mV, ID = 0 -1.6 - Ω 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 6. Dynamic (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit |
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