STPS61H100CW datasheet(3/7 Pages) STMICROELECTRONICS

3 / 7 page

STPS61H100C

Characteristics

Doc ID 10029 Rev 3

3/7

Figure 1.

Conduction losses versus average

current (per diode)

Figure 2.

Normalized avalanche power

derating versus pulse duration

(W)

F(AV)

(A)

F(AV)

δ=tp/T

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(tp)

(1 µs)

ARM

Figure 3.

Normalized avalanche power

derating versus junction

temperature

Figure 4.

Average forward current versus

ambient temperature (

δ = 0.5, per

diode)

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(Tj)

(25 °C)

ARM

100

125

150

175

(A)

F(AV)

(°C)

amb

δ=tp/T

R=R

th(j-a)

th(j-c)

=15°C/W

th(j-a)

Figure 5.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

Figure 6.

Relative variation of thermal

impedance junction to case versus

pulse duration

100

150

200

250

300

350

400

1.E-03

1.E-02

1.E-01

1.E+00

I (A)

δ=0.5

t(s)

T =25°C

T =75°C

T =125°C

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Z/R

th(j-c)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

δ=tp/T

t (s)

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