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BTS436L2 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BTS436L2 Datasheet(HTML) 3 Page - Infineon Technologies AG |
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3 / 12 page ![]() BTS436L2 Semiconductor Group Page 3 2003-Oct-01 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 4) Vbb 43 V Supply voltage for full short circuit protection Tj Start=-40 ...+150°C Vbb 24 V Load dump protection 1) VLoadDump = VA + Vs, VA = 13.5 V RI 2)= 2 Ω, RL= 4.0 Ω, td= 200 ms, IN= low or high VLoad dump 3 60 V Load current (Current limit, see page 5) IL self-limited A Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150 °C Power dissipation (DC), TC ≤ 25 °C Ptot 75 W Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. (See diagram on page 8) IL(ISO) = 9.8 A, RL = 0 Ω, E 4) AS=0.33J: ZL 5.0 mH Electrostatic discharge capability (ESD) IN: (Human Body Model) ST: out to all other pins shorted: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993; R=1.5k Ω; C=100pF VESD 1.0 4.0 8.0 kV Input voltage (DC) VIN -10 ... +16 V Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 7 IIN IST ±2.0 ±5.0 mA Thermal Characteristics Parameter and Conditions Symbol Values Unit min typ max Thermal resistance chip - case: junction - ambient (free air): device on pcb 5 ): RthJC RthJA -- -- -- -- -- 33 1.75 75 -- K/W 1) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω resistor for the GND connection is recommended). 2) RI = internal resistance of the load dump test pulse generator 3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 4) EAS is the maximum inductive switch-off energy 5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for Vbb connection. PCB is vertical without blown air. |
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