BTS550P datasheet(3/15 Pages) INFINEON

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Data Sheet BTS550P

Infineon Technologies AG

2003-Oct-01

Thermal Characteristics

Parameter and Conditions

Symbol

Values

Unit

min

typ

max

Thermal resistance

chip - case:

RthJC7)

0.35

K/W

Junction - ambient (free air):

RthJA

Electrical Characteristics

Parameter and Conditions

Symbol

Values

Unit

at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified

min

typ

max

Load Switching Capabilities and Characteristics

On-state resistance (Tab to pins 1,5, see measurement

circuit page 8)

IL = 20 A, Tj = 25 °C:

VIN = 0, IL = 20 A, Tj = 150 °C:

RON

2.8

5.0

3.6

6.5

Ω

IL = 120 A, Tj = 150 °C:

6.5

Vbb = 6V8), IL = 20 A, Tj = 150 °C: RON(Static)

Nominal load current9) (Tab to pins 1,5)

ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 10)

IL(ISO)

115

Maximum load current in resistive range

(Tab to pins 1,5)

VON = 1.8 V, Tc = 25 °C:

see diagram on page 12

VON = 1.8 V, Tc = 150 °C:

IL(Max)

390

215

Turn-on time11)

IIN

to 90% VOUT:

Turn-off time

IIN

to 10% VOUT:

RL = 1

Ω , Tj =-40...+150°C

ton

toff

120

250

600

150

µs

Slew rate on 11) (10 to 30% VOUT )

RL = 1

Ω ,Tj =25°C

dV/dton

0.2

0.5

0.8

µs

Slew rate off 11) (70 to 40% VOUT )

RL = 1

Ω ,Tj =25°C

-dV/dtoff

0.2

0.6

µs

Thermal resistance RthCH case to heatsink (about 0.25 K/W with silicone paste) not included!

)

Decrease of Vbb below 10 V causes a slowly a dynamic increase of RON to a higher value of RON(Static). As

long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C.

not subject to production test, specified by design

10) TJ is about 105°C under these conditions.

) See timing diagram on page 13.

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