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BUZ72AL Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # BUZ72AL
Description  SIPMOS Power Transistor
PDF  8 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BUZ72AL Datasheet(HTML) 1 Page - Infineon Technologies AG

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Data Sheet
1
05.99
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 72 AL
100 V
9 A
0.25
Ω
TO-220 AB
C67078-S1327-A3
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
TC = 25 ˚C
ID
9
A
Pulsed drain current
TC = 25 ˚C
IDpuls
36
Avalanche current,limited by Tjmax
IAR
10
Avalanche energy,periodic limited by Tjmax
EAR
7.9
mJ
Avalanche energy, single pulse
ID = 10 A, VDD = 25 V, RGS = 25 Ω
L
= 885 µH, Tj = 25 ˚C
EAS
59
Gate source voltage
VGS
± 20
V
ESD-Sensitivity HBM as per MIL-STD 883
Class 1
Power dissipation
TC = 25 ˚C
Ptot
40
W
Operating temperature
Tj
-55 ... + 150
˚C
Storage temperature
Tstg
-55 ... + 150
Thermal resistance, chip case
RthJC
≤ 3.1
K/W
Thermal resistance, chip to ambient
RthJA
75
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
BUZ 72AL


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