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STGB15M65DF2 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STGB15M65DF2
Description  Trench gate field-stop IGBT M series, 650 V, 15 A low loss
PDF  19 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGB15M65DF2 Datasheet(HTML) 1 Page - STMicroelectronics

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November 2015
DocID025356 Rev 2
1/19
This is information on a product in full production.
www.st.com
STGB15M65DF2
Trench gate field-stop IGBT M series, 650 V, 15 A low loss
Datasheet - production data
Figure 1: Internal schematic diagram
Features
6 µs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 15 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Motor control
UPS
PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGBTs, which represent an optimum compromise
in performance to maximize the efficiency of
inverter systems where low-loss and short-circuit
capability are essential. Furthermore, a positive
VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Table 1: Device summary
Order code
Marking
Package
Packing
STGB15M65DF2
G15M65DF2
D²PAK
Tape and reel
1
3
TAB
D2PAK


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