CGY41

Semiconductor Group

2 of 7

Target DATASHEET

Maximum ratings

Symbol

Value

Unit

Drain-voltage

V

D

5.5

V

Gate-voltage

V

G

-4 ... 0

V

Drain-gate voltage

V

DG

9.5

V

RF Input power

1)

IN

16

dBm

Channel temperature

T

Ch

175

°C

Storage temperature range

T

stg

-55...+175

°C

2)

P

tot

440

mW

Thermal resistance

Channel-soldering point

2)

R

thChS

155

K/W

Notes: Exceeding any of the max. ratings may cause permanent damage to the device. Appropriate

handling is required to protect the electrostatic sensitive MMIC against degradation due to excess

voltage or current spikes. Proper ground connection of leads 2 and 4 ( with min. inductance ) is required

to achieve the guaranteed RF performance, stable operating conditions and adequate cooling.

2) Ts is measured on the source lead at the soldering point to the PCB.