STH360N4F6-2 datasheet(1/12 Pages) STMICROELECTRONICS

Part #	STH360N4F6-2

Description	N-channel 40 V, 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

August 2012

Doc ID 023422 Rev 1

1/12

12

STH360N4F6-2

N-channel 40 V, 180 A STripFET™ VI DeepGATE™

Power MOSFET in H²PAK-2 package

Datasheet

− preliminary data

Features

■ Low gate charge

■ Very low on-resistance

■ High avalanche ruggedness

Applications

■ Switching applications

Description

This device is an N-channel Power MOSFET

developed using the 6th generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFET exhibits

the lowest RDS(on) in all packages.

Figure 1.

Internal schematic diagram

Order code

VDSS

RDS(on) max

ID

STH360N4F6-2

40 V

< 1.25 m

Ω 180 A(1)

1.

Current limited by package

H2PAK-2

1

2

3

TAB

Table 1.

Device summary

Order code

Marking

Package

Packaging

STH360N4F6-2

360N4F6

H2PAK-2

Tape and reel

www.st.com

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STH360N4F6-2 Datasheet(PDF) 1 Page - STMicroelectronics

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