STI360N4F6 datasheet(1/11 Pages) STMICROELECTRONICS

Part #	STI360N4F6

Description	N-channel 40 V, 120 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAK and TO-220 packages

PDF	11 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

August 2012

Doc ID 023419 Rev 1

1/11

11

STI360N4F6, STP360N4F6

N-channel 40 V, 120 A STripFET™ VI DeepGATE™

Power MOSFET in I²PAK and TO-220 packages

Datasheet

− preliminary data

Features

■ Low gate charge

■ Very low on-resistance

■ High avalanche ruggedness

Applications

■ Switching applications

Description

These devices are N-channel Power MOSFETs

developed using the 6th generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFETs exhibits

the lowest RDS(on) in all packages.

Figure 1.

Internal schematic diagram

Order codes

VDSS

RDS(on)

max

ID

STI360N4F6

40 V

< 1.8 m

Ω

120 A(1)

1.

Current limited by package

STP360N4F6

TO-220

I²PAK

1

2

3

TAB

1

2

3

TAB

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STI360N4F6

360N4F6

I²PAK

Tube

STP360N4F6

TO-220

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