STL23NS3LLH7 datasheet(1/14 Pages) STMICROELECTRONICS

Part #	STL23NS3LLH7

Description	N-channel 30 V, 0.0027 Ω typ., 23 A STripFET™ H7 Power MOSFET plus monolithic Schottky in a PowerFLAT™ 3.3 x 3.3

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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May 2015

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This is information on a product in full production.

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STL23NS3LLH7

N-

channel 30 V, 0.0027 Ω typ., 23 A STripFET™ H7 Power

MOSFET plus monolithic Schottky in a PowerFLAT™ 3.3 x 3.3

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on) max

ID

STL23NS3LLH7

30 V

0.0037 Ω

23 A



Very low on-resistance



Very low Qg



High avalanche ruggedness



Embedded Schottky diode

Applications



Switching applications

Description

This N-channel Power MOSFET utilizes the

STripFET H7 technology with a trench gate

structure combined with extremely low on-

resistance. The device also offers ultra-low

capacitances for higher switching frequency

operations.

Table 1: Device summary

Order code

Marking

Package

Packing

STL23NS3LLH7

23NS3

PowerFLAT

TM 3.3 x 3.3

Tape and reel

D(5, 6, 7, 8)

G(4)

S(1, 2, 3)

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