STPS3L45AF datasheet(3/8 Pages) STMICROELECTRONICS

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DocID024949 Rev 2

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STPS3L45AF

Characteristics

Figure 2. Average forward power dissipation

versus average forward current

Figure 3. Average forward current versus

ambient temperature (

δ = 0.5)

PF(AV)(W)

0.0

0.4

0.8

1.2

1.6

2.0

2.4

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

d=tp/T

d = 0.05

d =1

d =0.5

d =0.2

d =0.1

IF(AV)(A)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

100

125

150

Tamb(°C)

Rth(j-a) = Rth(j-l)

d=tp/T

Figure 4. Normalized avalanche power derating

versus pulse duration

Figure 5. Relative variation of thermal

impedance junction to lead versus pulse

duration

0,001

0,01

0,1

100

1000

tP µs

()

Parm tp /Parm 10µs

()

(

)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Single pulse

Zth(j- )/Rth(j- )

tp(s)

Figure 6. Reverse leakage current versus

reverse voltage applied (typical values)

Figure 7. Junction capacitance versus reverse

voltage applied (typical values)

IR(mA)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

VR(V)

Tj = 25°C

Tj = 50°C

Tj = 75°C

Tj = 125°C

Tj = 100°C

Tj = 150°C

C(pF)

100

1000

100

VR(V)

F = 1MHz

VOSC = 30mVRMS

Tj = 25°C

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