STTH1003S-Y datasheet(2/7 Pages) STMICROELECTRONICS

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Characteristics

STTH1003S-Y

2/7

Doc ID 022517 Rev 1

Characteristics

To evaluate the conduction losses use the following equation:

P = 0.86 x IF(AV) + 0.024 IF

(RMS))

Table 2.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

300

IF(RMS)

Forward rms current

IF(AV)

Average forward current

Tc = 150 °C  = 0.5

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

100

IRSM

Non repetitive avalanche current

tp = 20 µs square

Tstg

Storage temperature range

-65 to + 175

°C

Operating junction temperature range

-40 to + 175

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

°C/W

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 125 °C

100

(2)

Forward voltage drop

Tj = 25 °C

IF = 10 A

1.30

Tj = 125 °C

0.9

1.1

Pulse test: tp = 5 ms,  < 2%

Pulse test: tp = 380 µs,  < 2%

Table 5.

Recovery characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery time

Tj = 25 °C

IF = 0.5 A, Irr = 0.25 A, IR = 1 A

IF = 1A, VR = 30V

dIF/dt = -50 A/µs

-28

tfr

Forward recovery time

Tj = 25 °C

IF = 10 A, dIF/dt = 100 A/µs

VFR = 1.1 x VFmax

200

VFP

Peak forward voltage

Tj = 25 °C

IF = 10 A, dIF/dt = 100 A/µs

2.5

3.5

IRM

Reverse recovery current

Tj = 125 °C

IF = 10 A, VCC = 200 V

dIF/dt = 200 A/µs

-5.7

7.5

Sfactor

Softness factor

0.3

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