STW18N60DM2 datasheet(3/12 Pages) STMICROELECTRONICS

3 / 12 page

STW18N60DM2

Electrical ratings

DocID027680 Rev 3

3/12

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase= 100 °C

7.6

IDM(1)

Drain current (pulsed)

PTOT

Total dissipation at Tcase = 25 °C

dv/dt(2)

Peak diode recovery voltage slope

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

Tstg

Storage temperature range

–55 to 150

°C

Operating junction temperature range

°C

Notes:

(1) This value is rated according to Rthj-case.

(2) ISD ≤ 12, di/dt ≤ 400 A/µS, VDSpeak < V(BR)DSS, VDD = 80% V(BR)DSS

(3) VDS ≤ 480 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

1.39

°C/W

Rthj-amb

Thermal resistance junction-ambient

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)

2.5

EAR

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)

380

STW18N60DM2 Datasheet(PDF) 3 Page - STMicroelectronics

STW18N60DM2 Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL