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STF24N60DM2 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STF24N60DM2
Description  Extremely high dv/dt ruggedness
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF24N60DM2 Datasheet(HTML) 5 Page - STMicroelectronics

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DocID025498 Rev 4
5/13
STF24N60DM2
Electrical characteristics
13
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
18
A
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
72
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 18 A, VGS = 0
-
1.6
V
trr
Reverse recovery time
ISD = 18 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 16)
-
155
ns
Qrr
Reverse recovery charge
-
956
nC
IRRM
Reverse recovery current
-
12.5
A
trr
Reverse recovery time
ISD = 18 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 16)
-
200
ns
Qrr
Reverse recovery charge
-
1450
nC
IRRM
Reverse recovery current
-
13
A



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