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STFU18N65M2 Datasheet(PDF) 7 Page - STMicroelectronics

Part # STFU18N65M2
Description  Extremely low gate charge
PDF  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STFU18N65M2 Datasheet(HTML) 7 Page - STMicroelectronics

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STFU18N65M2
Electrical characteristics
DocID027562 Rev 2
7/12
Figure 8: Capacitance variations
Figure 9: Output capacitance stored energy
Figure 10: Normalized gate threshold voltage vs
temperature
Figure 11: Normalized on-resistance vs temperature
Figure 12: Source-drain diode forward
characteristics
Figure 13: Normalized V(BR)DSS vs temperature
C
1000
100
10
1
0.1
10
100
V
DS (V)
(pF)
1
C
iss
C
oss
C
rss
GIPG161220141520ALS
1
2
3
4
5
6
0
0
100
V
DS (V)
400
200
300
500
600
E
OSS
(µJ)
GIPG161220141616ALS
0.6
0.7
0.8
0.9
1.0
1.1
V
GS(th)
-75
T
J(°C)
(norm)
-25
75
25
125
I
D = 250 µ A
GIPG161220141528ALS
0.2
0.6
1.0
1.4
1.8
2.2
R
DS(on)
-75
T
J(°C)
(norm)
-25
75
25
125
V
GS = 10 V
GIPG161220141538ALS
I
SD (A)
0.4
0.6
0.8
1.0
1.2
T
J=150°C
T
J
=-50°C
T
J=25°C
V
SD
(V)
0
2
4
6
8
10
12
GIPG121620141553ALS
-75
T
J(°C)
-25
75
25
125
0.88
0.92
0.96
1.00
1.04
1.08
V
(BR)DSS
(norm)
I
D = 1 m A
GIPG121620141601ALS



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