STFU28N65M2 datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STFU28N65M2

4/12

DocID027607 Rev 3

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

ID = 1 mA, VGS = 0 V

650

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 650 V

µA

VDS = 650 V, TC = 125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 10 A

0.15

0.18

Ω

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

1440

Coss

Output capacitance

Crss

Reverse transfer capacitance

oss eq.

(1)

Equivalent output capacitance

VDS = 0 to 520 V,

VGS = 0 V

307

Intrinsic gate resistance

f = 1 MHz, ID = 0

4.9

Ω

Total gate charge

VDD = 520 V, ID = 20 A,

VGS = 10 V ( see Figure

15: "Test circuit for gate

charge behavior" )

Qgs

Gate-source charge

Qgd

Gate-drain charge

Notes:

(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 325 V, ID = 10 A,

RG = 4.7

Ω, VGS = 10 V (

see Figure 14: "Test circuit

for resistive load switching

times" and Figure 19:

"Switching time waveform" )

13.4

Rise time

td(off)

Turn-off delay time

Fall time

8.8

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