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STGF15M65DF2 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STGF15M65DF2
Description  Trench gate field-stop IGBT M series, 650 V 15 A low loss
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGF15M65DF2 Datasheet(HTML) 5 Page - STMicroelectronics

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STGF15M65DF2
Electrical characteristics
DocID028488 Rev 1
5/15
Table 6: IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 400 V, IC = 15 A,
VGE = 15 V, RG = 12
Ω
(see Figure 29: " Test circuit
for inductive load switching" )
24
-
ns
tr
Current rise time
7.8
-
ns
(di/dt)on
Turn-on current slope
1570
-
A/µs
td(off)
Turn-off-delay time
93
-
ns
tf
Current fall time
106
-
ns
Eon(1)
Turn-on switching losses
0.09
-
mJ
Eoff(2)
Turn-off switching losses
0.45
-
mJ
Ets
Total switching losses
0.54
-
mJ
td(on)
Turn-on delay time
VCE = 400 V, IC = 15 A,
VGE = 15 V, RG = 12
Ω
TJ = 175 °C (see Figure 29: "
Test circuit for inductive load
switching" )
24.8
-
ns
tr
Current rise time
9.2
-
ns
(di/dt)on
Turn-on current slope
1300
-
A/µs
td(off)
Turn-off-delay time
96
-
ns
tf
Current fall time
169
-
ns
Eon
Turn-on switching losses
0.22
-
mJ
Eoff
Turn-off switching losses
0.61
-
mJ
Ets
Total switching losses
0.83
-
mJ
tsc
Short-circuit withstand time
VCC
≤ 400 V, VGE = 15 V,
TJstart = 150 °C
6
-
µs
Notes:
(1)Energy losses include reverse recovery of the diode.
(2)Turn-off losses also include the tail of the collector current.
Table 7: Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 15 A, VR = 400 V,
VGE = 15 V (see Figure 29: "
Test circuit for inductive load
switching") di/dt = 1000 A/µs
-
142
-
ns
Qrr
Reverse recovery charge
-
525
-
nC
Irrm
Reverse recovery current
-
13.4
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
790
-
A/µs
Err
Reverse recovery energy
-
64
-
µJ
trr
Reverse recovery time
IF = 15 A, VR = 400 V,
VGE = 15 V TJ = 175 °C
(see Figure 29: " Test circuit
for inductive load switching")
di/dt = 1000 A/µs
-
241
-
ns
Qrr
Reverse recovery charge
-
1690
-
nC
Irrm
Reverse recovery current
-
20
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
420
-
A/µs
Err
Reverse recovery energy
-
176
-
µJ



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