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STGP10M65DF2 Datasheet(PDF) 6 Page - STMicroelectronics |
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STGP10M65DF2 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 18 page  Electrical characteristics STGP10M65DF2 6/18 DocID027352 Rev 4 Symbol Parameter Test conditions Min. Typ. Max. Unit Err Reverse recovery energy - 52 µJ trr Reverse recovery time IF = 10 A, VR = 400 V, VGE = 15 V TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching") di/dt = 1000 A/µs - 201 ns Qrr Reverse recovery charge - 1352 nC Irrm Reverse recovery current - 19 A dIrr/dt Peak rate of fall of reverse recovery current during tb - 405 A/µs Err Reverse recovery energy - 150 µJ |
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