IPD06N03LA datasheet(3/10 Pages) INFINEON

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IPD06N03LA

IPU06N03LA

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

2093

2783

Output capacitance

C oss

800

1064

Reverse transfer capacitance

Crss

147

Turn-on delay time

t d(on)

-10

Rise time

t r

-7

Turn-off delay time

t d(off)

-29

Fall time

t f

-5

Gate Charge Characteristics

Gate to source charge

Q gs

-7

Gate charge at threshold

Q g(th)

3.3

4.5

Gate to drain charge

Q gd

4.6

6.9

Switching charge

Q sw

-8

Gate charge total

Q g

-17

Gate plateau voltage

V plateau

3.2

Gate charge total, sync. FET

Q g(sync)

V DS=0.1 V,

V GS=0 to 5 V

-15

Output charge

Q oss

V DD=15 V, V GS=0 V

-17

Reverse Diode

Diode continous forward current

I S

Diode pulse current

I S,pulse

350

Diode forward voltage

V SD

V GS=0 V, I F=50 A,

T j=25 °C

0.92

1.2

Reverse recovery charge

Q rr

V R=15 V, I F=I S,

di F/dt =400 A/µs

6) See figure 16 for gate charge parameter definition

T C=25 °C

Values

V GS=0 V, V DS=15 V,

f =1 MHz

V DD=15 V, V GS=10 V,

I D=25 A, R G=2.7 Ω

V DD=15 V, I D=25 A,

V GS=0 to 5 V

Rev. 1.4

page 3

2004-02-04

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