STL19N65M5 datasheet(3/17 Pages) STMICROELECTRONICS

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DocID024984 Rev 1

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STL19N65M5

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

Drain-source voltage

650

Gate-source voltage

± 25

(1)

The value is rated according to R

thj-case

and limited by package.

Drain current (continuous) at T

= 25 °C

12.5

(1)

Drain current (continuous) at T

= 100 °C

8.3

(1),(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

(3)

When mounted on FR-4 board of inch

, 2oz Cu

Drain current (continuous) at T

amb

= 25 °C

2.3

(3)

Drain current (continuous) at T

amb

= 100 °C

1.5

TOT

(3)

Total dissipation at T

amb

= 25 °C

2.8

TOT

(1)

Total dissipation at T

= 25 °C

Avalanche current, repetitive or not-

repetitive (pulse width limited by T

max)

Single pulse avalanche energy

(starting T

= 25 °C, I

= I

, V

= 50 V)

210

dv/dt

(4)

≤ 12.5 A, di/dt ≤ 400 A/μs, V

Peak ≤

(BR)DSS

, V

= 400 V.

Peak diode recovery voltage slope

V/ns

stg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

thj-case

Thermal resistance junction-case max

1.39

°C/W

thj-amb

Thermal resistance junction-amb max

°C/W

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