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P1000D Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # P1000D
Description  Standard Recovery Rectifier Diodes
PDF  2 Pages
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

P1000D Datasheet(HTML) 1 Page - Diotec Semiconductor

  P1000D Datasheet HTML 1Page - Diotec Semiconductor P1000D Datasheet HTML 2Page - Diotec Semiconductor  
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P1000A ... P1000S
P1000A ... P1000S
Standard Recovery Rectifier Diodes
Gleichrichterdioden mit Standard-Sperrverzug
IFAV = 10 A
VF
< 0.9 V
Tjmax = 175°C
VRRM = 50...1200 V
IFSM = 400/450 A
trr
~ 1500 ns
Version 2015-11-04
Ø 8 x 7.5 (~P600)
Dimensions - Maße [mm]
Typical Application
50/60 Hz Mains Rectification,
Power Supplies, Polarity Protection
Commercial grade 1)
Typische Anwendung
50/60 Hz Netzgleichrichtung,
Stromversorgungen, Verpolschutz
Standardausführung 1)
Features
Package smaller than industry
standard
VRRM up to 1200 V
High forward surge current
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheit
Gehäuse kleiner als Industrie-
standard
VRRM bis zu 1200 V
Hohe Stoßstromfestigkeit
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1)
Taped in ammo pack
500
Gegurtet in Ammo-Pack
Weight approx.
1.7 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s Löt- und Einbaubedingungen
MSL N/A
Maximum ratings 2)
Grenzwerte 2)
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
P1000A
50
50
P1000B
100
100
P1000D
200
200
P1000G
400
400
P1000J
600
600
P1000K
800
800
P1000M
1000
1000
P1000S
1200
1200
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 50°C
IFAV
10 A 3)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
80 A 3)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
400/450 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
800 A2s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+175°C
-50...+175°C
1 Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
Tj = 25°C unless otherwise specified – Tj = 25°C wenn nicht anders angegeben
3
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
1
http://www.diotec.com/
© Diotec Semiconductor AG
Pb
RoHS
Ø 1.2
±0.05
Ø 8±0.1


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