STW50N65DM2AG datasheet(5/12 Pages) STMICROELECTRONICS

Part #	STW50N65DM2AG

Description	Automotive-grade N-channel 650 V, 0.070 Ω typ., 38 A Power MOSFET MDmesh™ DM2 in a TO-247 package

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 12 page

STW50N65DM2AG

Electrical characteristics

DocID028101 Rev 1

5/12

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current

(pulsed)

152

VSD(2)

Forward on voltage

VGS = 0 V, ISD = 38 A

1.6

trr

Reverse recovery time

ISD = 38 A, di/dt = 100 A/µs,

VDD = 60 V (see Figure 16:

"Test circuit for inductive

load switching and diode

recovery times")

150

Qrr

Reverse recovery charge

0.96

µC

IRRM

Reverse recovery current

12.8

trr

Reverse recovery time

ISD = 38 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C (see

Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

245

Qrr

Reverse recovery charge

2.7

µC

IRRM

Reverse recovery current

Notes:

(1) Pulse width is limited by safe operating area.

(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

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