STW72N60DM2AG datasheet(5/12 Pages) STMICROELECTRONICS

Part #	STW72N60DM2AG

Description	Extremely high dv/dt ruggedness

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 12 page

STW72N60DM2AG

Electrical characteristics

DocID027314 Rev 4

5/12

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current

(pulsed)

264

VSD(2)

Forward on voltage

VGS = 0 V, ISD = 66 A

1.6

trr

Reverse recovery time

ISD = 66 A, di/dt = 100 A/µs,

VDD = 480 V (see Figure 16:

"Test circuit for inductive

load switching and diode

recovery times")

136

Qrr

Reverse recovery charge

0.65

µC

IRRM

Reverse recovery current

9.6

trr

Reverse recovery time

ISD = 66 A, di/dt = 100 A/µs,

VDD = 480 V, Tj = 150 °C

(see Figure 16: "Test circuit

for inductive load switching

and diode recovery times")

224

Qrr

Reverse recovery charge

2.28

???C

IRRM

Reverse recovery current

20.4

Notes:

(1) Pulse width is limited by safe operating area.

(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

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