STW78N65M5 datasheet(5/14 Pages) STMICROELECTRONICS

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STW78N65M5

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(V)

Voltage delay time

VDD = 400 V, ID = 40 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 17)

(see Figure 20)

-163

tr(V)

Voltage rise time

tf(i)

Current fall time

tc(off)

Crossing time

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM

(1)

Pulse width limited by safe operating area

Source-drain current (pulsed)

276

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 69 A, VGS = 0

1.5

trr

Reverse recovery time

ISD = 69 A,

di/dt = 100 A/µs

VDD = 100 V (see Figure 17)

504

Qrr

Reverse recovery charge

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 69 A,

di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see Figure 17)

635

Qrr

Reverse recovery charge

µC

IRRM

Reverse recovery current

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