NCE4012S datasheet(2/7 Pages) NCEPOWER

2 / 7 page

Wuxi NCE Power Semiconductor Co., Ltd

Page

v1.0

NCE4012S

Pb Free Product

http://www.ncepower.com

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

Zero Gate Voltage Drain Current

IDSS

VDS=40V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

±100

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

1.2

1.6

2.5

VGS=10V, ID=10A

8.4

mΩ

Drain-Source On-State Resistance

RDS(ON)

VGS=4.5V, ID=8A

12.3

mΩ

Forward Transconductance

gFS

VDS=5V,ID=10A

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

1780

Output Capacitance

Coss

209

Reverse Transfer Capacitance

Crss

VDS=20V,VGS=0V,

F=1.0MHz

160

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

6.4

Turn-on Rise Time

17.2

Turn-Off Delay Time

td(off)

29.6

Turn-Off Fall Time

VDD=20V, RL=2Ω

VGS=10V,RG=3Ω

16.8

Total Gate Charge

Gate-Source Charge

Qgs

4.2

Gate-Drain Charge

Qgd

VDS=20V,ID=10A,

VGS=10V

9.5

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=10A

1.2

Diode Forward Current

(Note 2)

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

TJ = 25°C, IF = 10A

di/dt = 100A/μs

(Note3)

Notes:

Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

Guaranteed by design, not subject to production

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