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ACE2372M Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE2372M Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 7 page ![]() ACE2372M N-Channel 100-V MOSFET VER 1.1 1 Description ACE2372M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features • Low r DS(on) trench technology • Low thermal impedance • Fast switching speed Applications: • LED Inverter Circuits • DC/DC Conversion Circuits • Motor drives Absolute Maximum Ratings Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 Continuous Drain Current a TA=25°C ID 0.66 A TA=70°C 0.52 Pulsed Drain Current b IDM 3 Continuous Source Current (Diode Conduction) a IS 0.66 A Power Dissipation a TA=25°C PD 1.3 W TA=70°C 0.8 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Unit Maximum Junction-to-Ambient a t<=10sec RθJA 100 °C/W Steady State 166 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature |
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