ACE5212A

N-Channel Enhancement Mode MOSFET

VER 1.1

1

Description

The ACE5212A is the N-Channel enhancement mode power field effect transistors are produced using

high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior

switching performance.

These devices are particularly suited for low voltage applications such as notebook computer power

management and other battery powered circuits where high-side switching, low in-line power loss, and

resistance to transients are needed.

Features

DS(ON)=380

mΩ@VGS=4.5V

DS(ON)=450mΩ@VGS=2.5V

DS(ON) =800mΩ@VGS=1.8V

DS (ON)

Application