ACE5213A

P-Channel Enhancement Mode MOSFET

VER 1.1

1

Description

The ACE5213A is the P-Channel enhancement mode power field effect transistors are produced using

high cell density, DMOS trench technology. This high density process is especially tailored to minimize

on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as notebook computer power

management and other battery powered circuits where high-side switching, low in-line power loss, and

resistance to transients are needed.

Features

0.52Ω@VGS=-4.5V

0.70Ω@VGS=-2.5V

0.95Ω@VGS=-1.8V

DS (ON)

Application

Absolute Maximum Ratings

Parameter

Symbol

Max Unit

Drain-Source Voltage

-20

V

Gate-Source Voltage

±12

V

-0.45

A

-0.35

Pulsed Drain Current

-1.0

A

Continuous Source Current (Diode Conduction)

-0.3

A

Power Dissipation

0.27

W

0.16

Operating Junction Temperature

-55/150

Storage Temperature Range

-55/150