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Subject to change without notice.

www.cree.com/rf

CGH40180PP

180 W, RF Power GaN HEMT

Cree’s CGH40180PP is an unmatched, gallium nitride (GaN) high electron

mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt

rail, offers a general purpose, broadband solution to a variety of RF and

microwave applications. GaN HEMTs offer high efficiency, high gain and

wide bandwidth capabilities making the CGH40180PP ideal for linear

and compressed amplifier circuits. The transistor is available in a 4-lead

flange package.

Package Types: 440199

PN: CGH40180PP

FEATURES

• Up to 2.5 GHz Operation

• 20 dB Small Signal Gain at 1.0 GHz

• 15 dB Small Signal Gain at 2.0 GHz

• 220 W typical P

SAT

• 70 % Efficiency at P

SAT

• 28 V Operation

APPLICATIONS

• 2-Way Private Radio

• Broadband Amplifiers

• Cellular Infrastructure

• Test Instrumentation

• Class A, AB, Linear amplifiers suitable for

OFDM, W-CDMA, EDGE, CDMA waveforms