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SMBTA13 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SMBTA13 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 4 page  SMBTA13/ MMBTA13, SMBTA14/ MMBTA14 1 Feb-18-2002 NPN Silicon Darlington Transistors High DC current gain High collector current Low collector-emitter saturation voltage 1 2 3 VPS05161 Type Marking Pin Configuration Package SMBTA13/ MMBTA13 SMBTA14/ MMBTA14 s1M s1N 1 = B 1 = B 2 = E 2 = E 3 = C 3 = C SOT23 SOT23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCES 30 V Collector-base voltage VCBO 30 Emitter-base voltage VEBO 10 DC collector current IC 300 mA Peak collector current ICM 500 mA Base current 100 IB Peak base current IBM 200 Total power dissipation , TS = 81 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 210 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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