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VSMB2948RG Datasheet(PDF) 1 Page - Vishay Siliconix

Part # VSMB2948RG
Description  High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
PDF  8 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

VSMB2948RG Datasheet(HTML) 1 Page - Vishay Siliconix

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VSMB2948RG, VSMB2948G
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 17-May-13
1
Document Number: 84201
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
DESCRIPTION
VSMB2948 series are infrared, 940 nm emitting diodes in
GaAlAs multi quantum well (MQW) technology with high
radiant power and high speed, molded in clear, untinted
plastic packages (with lens) for surface mounting (SMD).
APPLICATIONS
• IR touch panels
• Remote control
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55
• Peak wavelength:
p = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:
 = ± 25°
• Low forward voltage
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reserve gullwing
• Package matches with detector VEMD2xx3X01 and
VEMT2xx3X01 series
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
VSMB2948RG
VSMB2948G
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
 (deg)
p (nm)
tr (ns)
VSMB2948RG
20
± 25
940
15
VSMB2948G
20
± 25
940
15
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMB2948RG
Tape and reel
MOQ: 6000 pcs, 6000 pcs/reel
Reverse gullwing
VSMB2948G
Tape and reel
MOQ: 6000 pcs, 6000 pcs/reel
Gullwing
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
5V
Forward current
IF
100
mA
Surge forward current
tp = 100 μs
IFSM
500
mA
Power dissipation
PV
160
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Soldering temperature
according figure 9, J-STD-020
Tsd
260
°C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm, soldered on PCB
RthJA
250
K/W


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