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SPD18P06P Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # SPD18P06P
Description  SIPMOS Power-Transistor
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPD18P06P Datasheet(HTML) 7 Page - Infineon Technologies AG

  SPD18P06P Datasheet HTML 1Page - Infineon Technologies AG SPD18P06P Datasheet HTML 2Page - Infineon Technologies AG SPD18P06P Datasheet HTML 3Page - Infineon Technologies AG SPD18P06P Datasheet HTML 4Page - Infineon Technologies AG SPD18P06P Datasheet HTML 5Page - Infineon Technologies AG SPD18P06P Datasheet HTML 6Page - Infineon Technologies AG SPD18P06P Datasheet HTML 7Page - Infineon Technologies AG SPD18P06P Datasheet HTML 8Page - Infineon Technologies AG SPD18P06P Datasheet HTML 9Page - Infineon Technologies AG  
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1999-11-22
Page 7
SPD18P06P
SPU18P06P
Preliminary data
Drain-source on-state resistance
RDS(on) = f (Tj)
parameter :
ID = -13.2 A, VGS = -10 V
-60
-20
20
60
100
140
°C
200
Tj
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
0.32
W
0.38
SPD18P06P
typ
98%
Gate threshold voltage
VGS(th) = f (Tj)
parameter:
VGS = VDS, ID = -1 mA
-60
-20
20
60
100
140
V
200
Tj
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-3.2
-3.6
-4.0
-4.4
V
-5.0
min
typ
max
Typ. capacitances
C = f (VDS)
parameter:
VGS=0V, f=1 MHz
0
-5
-10
-15
-20
-25
V
-35
VDS
1
10
2
10
3
10
4
10
pF
Ciss
Coss
Crss
Forward characteristics of reverse diode
IF = f (VSD)
parameter:
Tj , tp = 80 µs
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4 V
-3.0
VSD
-1
-10
0
-10
1
-10
2
-10
A
SPD18P06P
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 175 °C typ
T
j = 175 °C (98%)



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